
王静娟,女,博士,硕士研究生导师,2022年博士毕业于河北大学。主持河北省教育厅项目1项,河北地质大学校级项目2项,参与国家级项目4项,省部级项目8余项。合计发表SCI检索论文14余篇,其中以第一作者和共同一作身份发表SCI二区以上论文11篇,其中Advanced Functional Materials(一区TOP, IF:18.808)2篇,ACS Applied Materials & Interfaces(一区,IF:9.229)1篇, Science China Materials(一区,IF:8.273)1篇,Nanoscale(一区,IF:7.79)1篇, Applied Physics Letters(二区TOP,IF:3.8)3篇,Journal of Materials Chemistry C (二区TOP ,IF:7.393)2篇,Frontiers in Nanotechnology长篇英文综述1篇。目前授权发明专利2项,申请专利3项。
一、主要研究方向
光电忆阻器;新型类脑器件及系统;人工突触;神经网络;
二、主要科研成果
1.河北省教育厅青年项目:铁电忆阻器极化调控及其类脑性能研究(2024-2025),排名一;
2.河北地质大学国家预研项目:铁电异质结基忆阻器光电调控及其类脑视觉特性研究(2024-2025),排名一;
3.中国科学院战略性先导科技专项(B类)外协课题:外延铪基铁电薄膜及类脑器件研究(2020-2024),排名二;
4.国家重点基础研发计划:围栅晶体管、垂直互补和双面沟道晶体管研究(2022-2026),排名三;
5.国家自然科学基金:基于外延铪基薄膜畴壁调控忆阻器仿神经网络计算与物理机制研究(2019-2022),排名六;
三、代表性论文及著作
1. Boost of the Bio-memristor Performance for Artificial Electronic Synapses by Surface Reconstruction[J]. ACS Applied Materials & Interfaces, 2021, 13(33): 39641-39651. (JCR一区TOP,IF:9.2) (第一作者)
2. Alloy electrode engineering in memristors for emulating the biological synapse[J]. Nanoscale, 2022, 4(14): 1318-1326. (JCR一区,IF:7.8) (第一作者)
3. Artificial optoelectronic synapse based on epitaxial Ba0. 6Sr0. 4TiO3 thin films memristor for neuromorphic computing and image recognition. Applied Physics Letters, 2022, 121(26), 262104. [J]. (JCR二区TOP, IF:3.8) (第一作者)
4. Photoelectric memristor based on a PZT/NSTO heterojunction for neuromorphic computing applications." Journal of Materials Chemistry C (2025). (JCR一区,IF:7.4) (第一作者)
5. Silk flexible electronics: from Bombyx mori silk Ag nanoclusters hybrid materials to mesoscopic memristors and synaptic emulators[J]. Advanced Functional Materials, 2019, 29(42): 1904777. (JCR一区TOP,IF:18.8) (共同一作)
6. Flexible and insoluble artificial synapses based on chemical cross‐linked wool keratin[J]. Advanced Functional Materials, 2020, 30(45): 2002882. (JCR一区TOP,IF:18.8) (共同一作)
7. A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics[J]. Applied Physics Letters, 2018, 113(12): 122907. (JCR二区TOP,IF:3.8) (第一作者)
8. Artificial electronic synapse characteristics of a Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor device on flexible stainless steel substrate[J]. Applied Physics Letters, 2018, 113(1): 013503. (JCR二区TOP, IF:3.8)) (共同一作)
9. Photoelectric Memristor Based on PZT/NSTO Heterojunction for Electronic Synapse Applications[J]. Applied Physics Letters, 2023. (Under Review) (第一作者)
10. Memristive device with highly continuous conduction modulation and its underlying physical mechanism for electronic synapse application[J]. Science China Materials, 2021, 64(1): 179-188. (JCR一区,IF:8.3) (共同一作)
11. Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse[J]. Journal of Materials Chemistry C, 2020, 8(14): 4926-4933. (JCR一区,IF:7.4) (共同一作)
四、联系方式
Email:jingjuan-wang2024@163.com
TEL:15932503971